Vishay N Channel Mosfet, 900V, 1.2A To-220 - IRFIBF20GPBF

N CHANNEL MOSFET, 900V, 1.2A TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.2A; On Resistance Rds(on):8ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 900 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 1.2 Maximum Drain Source Resistance (mOhm): 8000@10V Typical Gate Charge @ Vgs (nC): 38(Max)@10V Typical Gate Charge @ 10V (nC): 38(Max) Typical Input Capacitance @ Vds (pF): 490@25V Maximum Power Dissipation (mW): 30000 Typical Fall Time (ns): 32 Typical Rise Time (ns): 21 Typical Turn-Off Delay Time (ns): 56 Typical Turn-On Delay Time (ns): 8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220FP Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 16.12(Max) Package Length: 10.63(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole