International Rectifier . IRFP064NPBF

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Poawer MOSFETs are well known for provides the designed with an extremely efficient and reliable device for use in a wide variety of applications.<p/> The TO-247 package is preferred for commercial-industrial applications where higher power levels predude the use of TO-220 devices.The TO-247 is similar but superior to the earlier TO-218 pacakge because of its isolated mounting hole.<p/> Features<br/> Dynamic dV/dt Rating<br/> Repetitive Avalanche Rated<br/> For Automatic Insertion<br/> End Stackable<br/> 175 °C Operating Temperature<br/> Fast Switching and Ease of Paralleling<br/> Compliant to RoHS Directive 2002/95/EC