INTERNATIONAL RECTIFIER . IRFP4768PBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| 1Source | IRFP4768PBF | 1 | 1 | ||
 Radwell | IRFP4768PBF | 1 | 1 | ||
| Hotenda | H1810941 | 1 | 3791 | 1 | 1 @ $8.52, 10 @ $7.70, 100 @ $6.37, 500 @ $5.55 |
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MOSFET MOSFT 250V 83A 21mOhm 195nC Qg (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 93 A Rds On - Drain-Source Resistance: 17.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 520 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFP4768PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 250V 83A 21mOhm 195nC Qg (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 93 A Rds On - Drain-Source Resistance: 17.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 520 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFP4768PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 250V 83A 21mOhm 195nC Qg (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 93 A Rds On - Drain-Source Resistance: 17.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 520 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFP4768PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 250V 83A 21mOhm 195nC Qg (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 93 A Rds On - Drain-Source Resistance: 17.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 520 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFP4768PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 250V 83A 21mOhm 195nC Qg (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 93 A Rds On - Drain-Source Resistance: 17.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 520 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFP4768PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |