Vishay Siliconix . IRFPC50APBF

N CHANNEL MOSFET, 600V, 11A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; On Resistance Rds(on):0.58ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 11 Maximum Drain Source Resistance (mOhm): 580@10V Typical Gate Charge @ Vgs (nC): 70(Max)@10V Typical Gate Charge @ 10V (nC): 70(Max) Typical Input Capacitance @ Vds (pF): 2100@25V Maximum Power Dissipation (mW): 180000 Typical Fall Time (ns): 29 Typical Rise Time (ns): 40 Typical Turn-Off Delay Time (ns): 33 Typical Turn-On Delay Time (ns): 15 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Pin Count: 3 Standard Package Name: TO-247 Supplier Package: TO-247AC Mounting: Through Hole Package Height: 20.82(Max) Package Length: 15.87(Max) Package Width: 5.31(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole