VISHAY . IRFPE30PBF
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 63J6815 | 1 | 1 | ||
 Galco | IRFPE30PBF-VISH | 500 | 500 | 1 @ $2.70 | |
| IRFPE30PBF | 1 | 1 | 1 @ $1.82, 5 @ $1.64, 25 @ $1.45, 100 @ $1.30 | ||
| 1Source | IRFPE30PBF | 1 | 1 | ||
| RS Delivers | 542-9872 | 1 | 1 | 1 @ $5.27 | |
| Allied Electronics | R1081802 | 1 | 1 | ||
| Digi-Key | 811606 | 500 | 500 | 500 @ $4.20 | |
 swatee.com | IRFPE30PBF | 1 | 184 | 1 | 1 @ $6.77 |
| iodParts | IRFPE30PBF | 1 | 355 | 1 | |
| Win Source | IRFPE30PBF | 1 | 1263 | 1 | |
| Hotenda | H1828462 | 1 | 1 |
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MOSFET N-Chan 800V 4.1 Amp
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | IRFPE30PBF |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFPE30PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFPE30PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFPE30PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFPE30PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFPE30PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
IRFPE30PBF, Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-247AC (10 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 800 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 4.1 Maximum Drain Source Resistance (mOhm): 3000@10V Typical Gate Charge @ Vgs (nC): 78(Max)@10V Typical Gate Charge @ 10V (nC): 78(Max) Typical Input Capacitance @ Vds (pF): 1300@25V Maximum Power Dissipation (mW): 125000 Typical Fall Time (ns): 30 Typical Rise Time (ns): 33 Typical Turn-Off Delay Time (ns): 82 Typical Turn-On Delay Time (ns): 12 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-247AC Pin Count: 3 Standard Package Name: TO-247 Mounting: Through Hole Package Height: 20.82(Max) Package Length: 15.87(Max) Package Width: 5.31(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole