international-rectifier . IRFR13N20DTRPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 31K1969 | 1 | 1 | ||
| 1Source | IRFR13N20DTRPBF | 1 | 1 | ||
 Radwell | IRFR13N20DTRPBF | 2000 | 2000 | ||
| Hotenda | H1809454 | 1 | 4000 | 1 | 1 @ $0.47 |
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MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | IRFR13N20DTRPBF |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR13N20DTRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR13N20DTRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR13N20DTRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR13N20DTRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC (500 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR13N20DTRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR13N20DTRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |