Vishay Mosfet, N, 200V, 4.8A, D-Pak - IRFR220PBF

MOSFET, N, 200V, 4.8A, D-PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; On Resistance Rds(on):0.8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

VISHAY IRFR220PBF MOSFET Transistor, N Channel, 4.8 A, 200 V, 800 mohm, 10 V, 4 V

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 200 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 4.8 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 800@10V Typical Gate Charge @ Vgs (nC): 14(Max)@10V Typical Gate Charge @ 10V (nC): 14(Max) Typical Input Capacitance @ Vds (pF): 260@25V Maximum Power Dissipation (mW): 2500 Typical Fall Time (ns): 13 Typical Rise Time (ns): 22 Typical Turn-Off Delay Time (ns): 19 Typical Turn-On Delay Time (ns): 7.2 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: DPAK Pin Count: 3 Standard Package Name: TO-252 Mounting: Surface Mount Package Height: 2.39(Max) Package Length: 6.73(Max) Package Width: 6.22(Max) PCB changed: 2 Tab: Tab