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international-rectifier . IRFR3707ZTRPBF

Attributes

Brand name, Manufacturer nameinternational-rectifier
Manufacturerinternational-rectifier International Rectifier
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberIRFR3707ZTRPBF
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWL6LTU B00LWL6P6Y B00LWL6SNE B00LWL6W08 B00LWL708G B00M2CJUHI
Brand, Label, Man, Publisher, StudioInternational Rectifier
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRFR3707ZTRPBF X1 MS 942-IRFR3707ZTRPBF X10 MS 942-IRFR3707ZTRPBF X100 MS 942-IRFR3707ZTRPBF X5 MS 942-IRFR3707ZTRPBF X50 MS 942-IRFR3707ZTRPBF X500
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 56 A Rds On - Drain-Source Resistance: 9.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 9.6 nC Maximum Operating Temperature: + 175 C
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (1 piece) MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (10 pieces) MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (100 pieces) MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (5 pieces) MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (50 pieces) MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark31K199611
1SourceIRFR3707ZTRPBF11
swatee.comIRFR3707ZTRPBF198611 @ $1.55
HotendaH1812301111 @ $0.35
RadwellIRFR3707ZTRPBF2000-220001 @ $0.81

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MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 56 A Rds On - Drain-Source Resistance: 9.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 9.6 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFR3707ZTRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 56 A Rds On - Drain-Source Resistance: 9.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 9.6 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFR3707ZTRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 56 A Rds On - Drain-Source Resistance: 9.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 9.6 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFR3707ZTRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 56 A Rds On - Drain-Source Resistance: 9.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 9.6 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFR3707ZTRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (500 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 56 A Rds On - Drain-Source Resistance: 9.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 9.6 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFR3707ZTRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 56 A Rds On - Drain-Source Resistance: 9.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 9.6 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFR3707ZTRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)