international-rectifier . IRFR4104TRPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 31K2004 | 1 | 1 | ||
![]() Radwell | IRFR4104TRPBF | 2000 | 2000 | ||
| 1Source | IRFR4104TRPBF | 1 | 1 | ||
| Digi-Key | 13481988 | 417 | 417 | 417 @ $0.60 | |
| Hotenda | H1810100 | 1 | 2000 | 1 | 1 @ $0.70 |
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MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 119 A Rds On - Drain-Source Resistance: 5.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 89 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4104TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 119 A Rds On - Drain-Source Resistance: 5.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 89 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4104TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 119 A Rds On - Drain-Source Resistance: 5.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 89 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4104TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 119 A Rds On - Drain-Source Resistance: 5.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 89 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4104TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg (500 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 119 A Rds On - Drain-Source Resistance: 5.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 89 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4104TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 119 A Rds On - Drain-Source Resistance: 5.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 89 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 140 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4104TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
