IRFR9310TRLPBF-Vishay-MOSFETs

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Material: Si Configuration: Single Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 400 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 1.8 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 100 Maximum Drain Source Resistance (mOhm): 7000@10V Typical Gate Charge @ Vgs (nC): 13(Max)@10V Typical Gate Charge @ 10V (nC): 13(Max) Typical Gate to Drain Charge (nC): 5(Max) Typical Gate to Source Charge (nC): 3.2(Max) Typical Reverse Recovery Charge (nC): 640 Typical Input Capacitance @ Vds (pF): 270@25V Typical Reverse Transfer Capacitance @ Vds (pF): 8@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 50 Maximum Power Dissipation (mW): 50000 Typical Fall Time (ns): 24 Typical Rise Time (ns): 10 Typical Turn-Off Delay Time (ns): 25 Typical Turn-On Delay Time (ns): 11 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Positive Gate Source Voltage (V): 20 Maximum Pulsed Drain Current @ TC=25°C (A): 7.2 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 50 Typical Gate Plateau Voltage (V): 5.1 Typical Reverse Recovery Time (ns): 170 Maximum Diode Forward Voltage (V): 4 Supplier Package: DPAK Pin Count: 3 Standard Package Name: TO-252 Mounting: Surface Mount Package Height: 2.39(Max) Package Length: 6.73(Max) Package Width: 6.22(Max) PCB changed: 2 Tab: Tab