international-rectifier . IRFS3207PBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 73K8225 | 1 | 1 | ||
 Radwell | IRFS3207PBF | 300 | 300 | ||
| 1Source | IRFS3207PBF | 1 | 1 | ||
| Hotenda | H1816922 | 1 | 78 | 1 | 1 @ $3.36, 10 @ $3.02, 100 @ $2.47, 500 @ $2.10 |
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Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | IRFS3207PBF |
| Manufacturer | International Rectifier |
MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS3207PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS3207PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS3207PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS3207PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Qg - Gate Charge: 180 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS3207PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |