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IRFS3607PBF Transistor - CASE: SOT404 MAKE: International Rectifier

International Rectifier . IRFS3607PBF

Attributes

Brand name, Manufacturer name, Manufacturer, Brand, Label, Man, Publisher, StudioInternational Rectifier
Attribute00International Rectifier - IR
Attribute01SOT404
Attribute02Transistor
Attribute03545667
AttributeKey00Manufacturer
AttributeKey01Case
AttributeKey02Type
AttributeKey03SKU
keywordsBuy IRFS3607PBF, IRFS3607PBF, IRFS3607PBF Transistor
moq, multiple, tierMinQty11
MPN, SKU, Part Number, PartNumberIRFS3607PBF
originalCurrency{'currency': 'GBP', 'tierPrice1': '13.29'}
qtyInStock3
snippetIRFS3607PBF Transistor - CASE: SOT404 MAKE: International Rectifier
tierPrice114.8495815
Product Group, ProductGroupBISS
AsinB00LWM1L30 B00LWM1MK2 B00LWM1OS2 B00LWM1QUS B00M2D9ITW
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRFS3607PBF X1 MS 942-IRFS3607PBF X10 MS 942-IRFS3607PBF X100 MS 942-IRFS3607PBF X5 MS 942-IRFS3607PBF X50
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 7.34 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 56 nC Maximum Operating Temperature: + 175 C
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (1 piece) MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (10 pieces) MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (100 pieces) MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (5 pieces) MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Little DiodeIRFS3607PBF1311 @ $14.85
RadwellIRFS3607PBF550550
1SourceIRFS3607PBF11
Digi-Key1343834611150 @ $0.36
swatee.comIRFS3607PBF139411 @ $3.79
HotendaH1823450172411 @ $1.38, 10 @ $1.23, 100 @ $0.96, 500 @ $0.79
Abacus TechnologiesIRFS3607PBF2713

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MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 7.34 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 56 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFS3607PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 7.34 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 56 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFS3607PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 7.34 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 56 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFS3607PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 7.34 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 56 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFS3607PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 7.34 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 56 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRFS3607PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)