International Rectifier . IRFS38N20DPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 38K2649 | 1 | 1 | ||
 Radwell | IRFS38N20DPBF | 1 | 1 | ||
| 1Source | IRFS38N20DPBF | 1 | 1 | ||
| Hotenda | H1816817 | 1 | 286 | 1 | 1 @ $3.12, 10 @ $2.80, 100 @ $2.29, 500 @ $1.95 |
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MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 44 A Rds On - Drain-Source Resistance: 54 mOhms Configuration: Single Qg - Gate Charge: 60 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 320 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS38N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 44 A Rds On - Drain-Source Resistance: 54 mOhms Configuration: Single Qg - Gate Charge: 60 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 320 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS38N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 44 A Rds On - Drain-Source Resistance: 54 mOhms Configuration: Single Qg - Gate Charge: 60 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 320 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS38N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |