international-rectifier . IRFS52N15DPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 58K5744 | 1 | 1 | ||
| 1Source | IRFS52N15DPBF | 1 | 1 | ||
 Radwell | IRFS52N15DPBF | 1 | 1 | ||
| componentsense.com | IRFS52N15DPBF | 1 | 20 | 1 | |
| swatee.com | IRFS52N15DPBF | 1 | 238 | 1 | 1 @ $8.11 |
| Hotenda | H1818515 | 1 | 1 |
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MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 32 mOhms Configuration: Single Qg - Gate Charge: 60 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 320 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS52N15DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 32 mOhms Configuration: Single Qg - Gate Charge: 60 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 320 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS52N15DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 32 mOhms Configuration: Single Qg - Gate Charge: 60 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 320 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS52N15DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 32 mOhms Configuration: Single Qg - Gate Charge: 60 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 320 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS52N15DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |