International Rectifier . IRFS59N10DPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 19K8187 | 1 | 1 | ||
| 1Source | IRFS59N10DPBF | 1 | 1 | ||
![]() Radwell | IRFS59N10DPBF | 1 | 1 | ||
| Digi-Key | 12610679 | 1 | 1 | 1 @ $0.94 | |
| RS Delivers | 2508386743 | 1 | 1 | ||
| Hotenda | H1810805 | 1 | 3939 | 1 | 1 @ $2.90, 10 @ $2.60, 100 @ $2.09, 500 @ $1.72 |
| IRFS59N10DPBF | 660 | ||||
| IRFS59N10DPBF | 740 | ||||
| IRFS59N10DPBF | 11800 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 59 A <b>Vds - Drain-Source Breakdown Voltage</b>: 100 V <b>Rds On - Drain-Source Resistance</b>: 25 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Qg - Gate Charge</b>: 76 nC <b>Maximum Operating Temperature</b>: + 175 C <b>Pd - Power Dissipation</b>: 200 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS59N10DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 59 A <b>Vds - Drain-Source Breakdown Voltage</b>: 100 V <b>Rds On - Drain-Source Resistance</b>: 25 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Qg - Gate Charge</b>: 76 nC <b>Maximum Operating Temperature</b>: + 175 C <b>Pd - Power Dissipation</b>: 200 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS59N10DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 100 <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 59 A <b>Vds - Drain-Source Breakdown Voltage</b>: 100 V <b>Rds On - Drain-Source Resistance</b>: 25 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Qg - Gate Charge</b>: 76 nC <b>Maximum Operating Temperature</b>: + 175 C <b>Pd - Power Dissipation</b>: 200 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS59N10DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 59 A <b>Vds - Drain-Source Breakdown Voltage</b>: 100 V <b>Rds On - Drain-Source Resistance</b>: 25 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Qg - Gate Charge</b>: 76 nC <b>Maximum Operating Temperature</b>: + 175 C <b>Pd - Power Dissipation</b>: 200 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS59N10DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
INTERNATIONAL RECTIFIER IRFS59N10DPBF MOSFET, N, D2-PAK (50 pieces)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 50<b>Order Unit:</b> Each\xa01 <b>Continuous Drain Current Id:</b>: 59 <b>Drain Source Voltage Vds:</b>: 100 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 3 <b>On Resistance Rds(on):</b>: 0.025 <b>Operating Temperature Max:</b>: 175 <b>Power Dissipation Pd:</b>: 200 <b>Rds(on) Test Voltage Vgs:</b>: 10 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Threshold Voltage Vgs Typ:</b>: 5.5 <b>Transistor Case Style:</b>: TO-263 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFS59N10DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | INTERNATIONAL RECTIFIER |
