IRFSL4227PBF Transistor - CASE: TO262 MAKE: International Rectifier
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | IRFSL4227PBF | 1 | 1 | ||
| 1Source | IRFSL4227PBF | 1 | 1 | ||
![]() Radwell | IRFSL4227PBF | 200 | 200 | ||
![]() swatee.com | IRFSL4227PBF | 1 | 146 | 1 | 1 @ $8.04 |
| Hotenda | H1810869 | 1 | 282 | 1 | 1 @ $4.33, 10 @ $3.89, 100 @ $3.18 |
| Allied Electronics | 70018351 | 200 | 50 | 1 @ $4.89, 10 @ $2.82, 100 @ $2.66, 250 @ $2.49, 500 @ $2.39, 1000 @ $2.29, 2500 @ $2.18 |
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MOSFET MOSFT 200V 65A 26mOhm 70nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 62 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Qg - Gate Charge: 70 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFSL4227PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 65A 26mOhm 70nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 62 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Qg - Gate Charge: 70 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFSL4227PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 65A 26mOhm 70nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 62 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Qg - Gate Charge: 70 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFSL4227PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 65A 26mOhm 70nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 62 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Qg - Gate Charge: 70 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFSL4227PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 65A 26mOhm 70nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 62 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Qg - Gate Charge: 70 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFSL4227PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |

