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Vishay N Channel Mosfet, 600V, 9.2A I2-Pak - IRFSL9N60APBF

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Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY VISHAY SILICONIX Vishay Vishay / Siliconix
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameVishay N Channel Mosfet, 600V, 9.2A I2-Pak - IRFSL9N60APBF
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple1000
MPN, Part Number, Keyword, ModelNumber, Model_number, PartNumber, Part_numberIRFSL9N60APBF
qtyInStock0
SKU63J7029
tierMinQty11
tierPrice11.87
urlhttps://www.newark.com/63J7029?CMP=AFC-DATAALCHEMY
Product Group, ProductGroupBISS
ASINB00LWLOI6I B00LWLONX6 B00LWLOQY2
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00HKIB87E B00LWLOI6I B00LWLOM4G B00LWLONX6 B00LWLOQY2 B09T61F6XS
BrandVishay Vishay / Siliconix
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 844-IRFSL9N60APBF X10 MS 844-IRFSL9N60APBF X50
ClassificationId306919011
DisplayNameMOSFET
Externally_assigned_product_identifier, Identifier6098011057094
FeatureManufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 9.2 A Rds On - Drain-Source Resistance: 750 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 170 W Mounting Style: Through Hole
FetchTime1535829172 1538120109 1704477375
Height150 73 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameVishay IRFSL9N60APBF, Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262 (25 Items)
Item_type_keywordmosfet-transistors
Label, Man, Publisher, StudioVISHAY SILICONIX Vishay / Siliconix
Linkhttps://m.media-amazon.com/images/I/112C6Z+d1eL._SL75_.jpg https://m.media-amazon.com/images/I/112C6Z+d1eL.jpg
Marketplace_idATVPDKIKX0DER
MaterialVishay
Number_of_items25
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant ECCN (US): EAR99 Part Status: Obsolete HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 9.2 Maximum Drain Source Resistance (mOhm): 750@10V Typical Gate Charge @ Vgs (nC): 49(Max)@10V Typical Gate Charge @ 10V (nC): 49(Max) Typical Input Capacitance @ Vds (pF): 1400@25V Maximum Power Dissipation (mW): 170000 Typical Fall Time (ns): 22 Typical Rise Time (ns): 25 Typical Turn-Off Delay Time (ns): 30 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-262 Pin Count: 3 Standard Package Name: I2PAK Mounting: Through Hole Package Height: 9.65(Max) Package Length: 10.67(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole
Product_site_launch_date2020-07-23T20:53:24.409Z
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET N-Chan 600V 9.2 Amp (1 piece) MOSFET N-Chan 600V 9.2 Amp (10 pieces) MOSFET N-Chan 600V 9.2 Amp (100 pieces) MOSFET N-Chan 600V 9.2 Amp (5 pieces) MOSFET N-Chan 600V 9.2 Amp (50 pieces)
Typeean
URLhttp://ecx.images-amazon.com/images/I/21MUAfcXcpL._SL75_.jpg
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625
Width150 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark63J7029100010001 @ $1.87
GalcoIRFSL9N60APBF-VISH100010001 @ $1.39
1SourceIRFSL9N60APBF11
Digi-Key812128100054210001 @ $3.44, 10 @ $3.09, 100 @ $2.53, 500 @ $2.16, 1000 @ $1.95
swatee.comIRFSL9N60APBF125511 @ $5.36
iodPartsIRFSL9N60APBF11
Win SourceIRFSL9N60APBF19401
HotendaH18143011233811 @ $2.72, 10 @ $2.44, 25 @ $2.31, 100 @ $2.00, 250 @ $1.90, 500 @ $1.70
Future Electronics5436241100010001000 @ $2.32, 50 @ $1.77, 100 @ $1.68, 250 @ $1.58, 500 @ $1.51

Related on Amazon

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MOSFET N-Chan 600V 9.2 Amp (1 piece)
Brand: Vishay / Siliconix
Catalog
CategoryIndustrial & Scientific
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVISHAY SILICONIX
View on Amazon (paid link)
MOSFET N-Chan 600V 9.2 Amp (10 pieces)
Brand: Vishay / Siliconix
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberIRFSL9N60APBF
LabelVishay / Siliconix
ManufacturerVishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 9.2 A Rds On - Drain-Source Resistance: 750 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 170 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET N-Chan 600V 9.2 Amp (100 pieces)
Catalog
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET N-Chan 600V 9.2 Amp (5 pieces)
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberIRFSL9N60APBF
LabelVISHAY SILICONIX
ManufacturerVISHAY SILICONIX
Catalog
CategoryIndustrial & Scientific
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET N-Chan 600V 9.2 Amp (50 pieces)
Brand: Vishay / Siliconix
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberIRFSL9N60APBF
LabelVishay / Siliconix
ManufacturerVishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 9.2 A Rds On - Drain-Source Resistance: 750 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 170 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
Vishay IRFSL9N60APBF, Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262 (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Obsolete HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 9.2 Maximum Drain Source Resistance (mOhm): 750@10V Typical Gate Charge @ Vgs (nC): 49(Max)@10V Typical Gate Charge @ 10V (nC): 49(Max) Typical Input Capacitance @ Vds (pF): 1400@25V Maximum Power Dissipation (mW): 170000 Typical Fall Time (ns): 22 Typical Rise Time (ns): 25 Typical Turn-Off Delay Time (ns): 30 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-262 Pin Count: 3 Standard Package Name: I2PAK Mounting: Through Hole Package Height: 9.65(Max) Package Length: 10.67(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole
View on Amazon (paid link)