international-rectifier . IRFU13N20DPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 63J7052 | 1 | 1 | ||
| Little Diode | IRFU13N20DPBF | 1 | 1 | ||
| 1Source | IRFU13N20DPBF | 1 | 1 | ||
 Radwell | IRFU13N20DPBF | 675 | 675 | 1 @ $2.25 | |
 swatee.com | IRFU13N20DPBF | 1 | 671 | 1 | 1 @ $3.50 |
| Hotenda | H1825762 | 1 | 4086 | 1 | 1 @ $1.39, 10 @ $1.25, 100 @ $0.97, 500 @ $0.80 |
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MOSFET MOSFT 200V 13A 235mOhm 25nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFU13N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 13A 235mOhm 25nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFU13N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 13A 235mOhm 25nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFU13N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 13A 235mOhm 25nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFU13N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 13A 235mOhm 25nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 235 mOhms Configuration: Single Qg - Gate Charge: 25 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFU13N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |