VISHAY . IRFU1N60APBF

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±30 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 1.4 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 7000@10V Typical Gate Charge @ Vgs (nC): 14(Max)@10V Typical Gate Charge @ 10V (nC): 14(Max) Typical Input Capacitance @ Vds (pF): 229@25V Maximum Power Dissipation (mW): 36000 Typical Fall Time (ns): 20 Typical Rise Time (ns): 14 Typical Turn-Off Delay Time (ns): 18 Typical Turn-On Delay Time (ns): 9.8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: IPAK Pin Count: 3 Standard Package Name: TO-251 Mounting: Through Hole Package Height: 6.22(Max) Package Length: 6.73(Max) Package Width: 2.38(Max) PCB changed: 3 Tab: Tab