Vishay Mosfet Transistor, P Channel, 8.8 A, 60 V, 280 Mohm, -10 V, -4 V Rohs Compliant: Yes - IRFU9024PBF

Vishay siliconix irfu9024pbf P Channel Mosfet, -60 V, 8.8 A IPAK

Vishay siliconix irfu9024pbf P Channel Mosfet, -60 V, 8.8 A IPAK

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 8.8 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 100 Maximum Drain Source Resistance (mOhm): 280@10V Typical Gate Charge @ Vgs (nC): 19(Max)@10V Typical Gate Charge @ 10V (nC): 19(Max) Typical Gate to Drain Charge (nC): 11(Max) Typical Gate to Source Charge (nC): 5.4(Max) Typical Reverse Recovery Charge (nC): 320 Typical Input Capacitance @ Vds (pF): 570@25V Typical Reverse Transfer Capacitance @ Vds (pF): 65@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 360 Maximum Power Dissipation (mW): 2500 Typical Fall Time (ns): 29 Typical Rise Time (ns): 68 Typical Turn-Off Delay Time (ns): 15 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Maximum Power Dissipation on PCB @ TC=25°C (W): 2.5 Maximum Pulsed Drain Current @ TC=25°C (A): 35 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 50 Typical Gate Plateau Voltage (V): 5.9 Typical Reverse Recovery Time (ns): 100 Maximum Diode Forward Voltage (V): 6.3 Maximum Positive Gate Source Voltage (V): 20 Supplier Package: IPAK Pin Count: 3 Standard Package Name: TO-251 Mounting: Through Hole Package Height: 6.22(Max) Package Length: 6.73(Max) Package Width: 2.39(Max) PCB changed: 3 Tab: Tab