international-rectifier . IRFZ44ESPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 63J7129 | 1 | 1 | ||
| 1Source | IRFZ44ESPBF | 1 | 1 | ||
 Radwell | IRFZ44ESPBF | 650 | 650 | ||
| Digi-Key | 12608615 | 1 | 1 | 293 @ $0.85 | |
| Hotenda | H1830789 | 1 | 1 |
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MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 48 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFZ44ESPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 48 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFZ44ESPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 48 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFZ44ESPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 48 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFZ44ESPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 48 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFZ44ESPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |