Vishay N Channel Mosfet, 100V, 1.3A, Hd-1 - IRLD120PBF

VISHAY IRLD120PBF N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP New Lot Quantity-10

VISHAY SILICONIX IRLD120PBF N CHANNEL MOSFET, 100V, 1.3A, HD-1

MOSFET, N, LOGIC, DIL; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:100V; MSL:-; No. of Pins:4; On Resistance Rds(on):270mohm; Operating Temperature Max:175°C; Power Dissipation Pd:1.3

N CHANNEL MOSFET, 100V, 1.3A, HD-1; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; On Resistance Rds(on):0.27ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:5V RoHS Compliant: Yes

Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP-4 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Dual Drain Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±10 Maximum Continuous Drain Current (A): 1.3 Maximum Drain Source Resistance (mOhm): 270@5V Typical Gate Charge @ Vgs (nC): 12(Max)@5V Typical Input Capacitance @ Vds (pF): 490@25V Maximum Power Dissipation (mW): 1300 Typical Fall Time (ns): 27 Typical Rise Time (ns): 64 Typical Turn-Off Delay Time (ns): 21 Typical Turn-On Delay Time (ns): 9.8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Supplier Package: HVMDIP Pin Count: 4 Standard Package Name: DIP Mounting: Through Hole Package Height: 3.37(Max) Package Length: 5(Max) Package Width: 6.29(Max) PCB changed: 4 Lead Shape: Through Hole