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VISHAY . IRLI640GPBF

Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY SILICONIX (VISHAY) Vishay
extendedQty, qtyInStock0
moq, multiple, Item_package_quantity, PackageQuantity1
MPN, Part Number, Model, Keyword, ModelNumber, Model_number, PartNumber, Part_numberIRLI640GPBF
qtySourceupdateFromUrlEntry
Product GroupBISS
ASIN, AsinB0731P5R8C B09T5Y8MMG
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
Brand, Label, Publisher, StudioSILICONIX (VISHAY) Vishay
Bullet_pointChannelType: N-Channel Drain-sourceOnResistance-Max: 0.18 Ω QgGateCharge: 66 nC RatedPowerDissipation(P): 40 W VoltageDraintoSource: 200 V
Case2200
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
ClassificationId306506011 306919011
DisplayNameIndustrial Electrical MOSFET
Externally_assigned_product_identifier, Identifier6098002488418 7437243634663
FeatureChannelType: N-Channel
FetchTime1625723735 1651494678 1674104468 1677718704 1689881518 1689882847 1714787750 1715086889
Height1024 150 500 56 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_name, TitleIRLI640GPBF, Trans MOSFET N-CH 200V 9.9A 3-Pin(3+Tab) TO-220FP (25 Items) SILICONIX (VISHAY) IRLI640GPBF N-Channel 200 V 40 W 66 nC Power Mosfet Flange Mount - TO-220FPAK - 10 item(s)
Item_type_keywordelectronic-components mosfet-transistors
Item_weight0.01
Linkhttps://m.media-amazon.com/images/I/11o4jwMSpnL._SL75_.jpg https://m.media-amazon.com/images/I/11o4jwMSpnL.jpg https://m.media-amazon.com/images/I/21-SGNN7neL._SL75_.jpg https://m.media-amazon.com/images/I/21-SGNN7neL.jpg https://m.media-amazon.com/images/I/31DPvTsg9wL.jpg
ManSILICONIX (VISHAY)
Marketplace_idATVPDKIKX0DER
NumberOfItems, Number_of_items10 25
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameBISS ELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 200 Maximum Gate Source Voltage (V): ±10 Maximum Continuous Drain Current (A): 9.9 Maximum Drain Source Resistance (mOhm): 180@5V Typical Gate Charge @ Vgs (nC): 66(Max)@10V Typical Gate Charge @ 10V (nC): 66(Max) Typical Input Capacitance @ Vds (pF): 1800@25V Maximum Power Dissipation (mW): 40000 Typical Fall Time (ns): 52 Typical Rise Time (ns): 83 Typical Turn-Off Delay Time (ns): 44 Typical Turn-On Delay Time (ns): 8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220FP Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 16.12(Max) Package Length: 10.63(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole N-Channel 200 V 40 W 66 nC Power Mosfet Flange Mount - TO-220FPAK ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-06-21T18:27:48.707Z 2022-02-18T20:14:00.418Z
Supplier_declared_dg_hz_regulationunknown
Typeean
URLhttps://m.media-amazon.com/images/I/11o4jwMSpnL._SL75_.jpg https://m.media-amazon.com/images/I/21xxsXLg1WL._SL75_.jpg
Unitounces pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625
Width1024 150 500 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark63J759611
TMEIRLI640GPBF11
GalcoIRLI640GPBF-VISH100010001 @ $0.00
Digi-Key81219111
RS Delivers708-4872P128511 @ $3.52
Allied ElectronicsR108457211
1SourceIRLI640GPBF11
Digi-KeyIRLI640GPBF-ND11389501 @ $3.03, 10 @ $2.72, 25 @ $2.57, 100 @ $2.06, 500 @ $1.83, 1000 @ $1.57, 2500 @ $1.54, 5000 @ $1.41
RadwellIRLI640GPBF100010001 @ $2.17
Win SourceIRLI640GPBF118301
HotendaH18075631146411 @ $2.73, 10 @ $2.45, 25 @ $2.32, 100 @ $2.01, 250 @ $1.90, 500 @ $1.71
Future Electronics73961951100011 @ $1.22, 100 @ $1.09, 500 @ $0.93

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SILICONIX (VISHAY) IRLI640GPBF N-Channel 200 V 40 W 66 nC Power Mosfet Flange Mount - TO-220FPAK - 10 item(s)
Brand: SILICONIX (VISHAY)
N-Channel 200 V 40 W 66 nC Power Mosfet Flange Mount - TO-220FPAK ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Channel
  • VoltageDraintoSource: 200 V
  • Drain-sourceOnResistance-Max: 0.18 Ω
  • QgGateCharge: 66 nC
  • RatedPowerDissipation(P): 40 W
Listing
Product groupBISS Basic
Product typeBISS
ModelIRLI640GPBF
Part numberIRLI640GPBF
Items per pack10
LabelSILICONIX (VISHAY)
ManufacturerSILICONIX (VISHAY)
Catalog
FeatureChannelType: N-Channel
CategoryIndustrial & Scientific
MPNIRLI640GPBF
Product groupBISS
Product typeBISS
ManufacturerSILICONIX (VISHAY)
View on Amazon (paid link)
IRLI640GPBF, Trans MOSFET N-CH 200V 9.9A 3-Pin(3+Tab) TO-220FP (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 200 Maximum Gate Source Voltage (V): ±10 Maximum Continuous Drain Current (A): 9.9 Maximum Drain Source Resistance (mOhm): 180@5V Typical Gate Charge @ Vgs (nC): 66(Max)@10V Typical Gate Charge @ 10V (nC): 66(Max) Typical Input Capacitance @ Vds (pF): 1800@25V Maximum Power Dissipation (mW): 40000 Typical Fall Time (ns): 52 Typical Rise Time (ns): 83 Typical Turn-Off Delay Time (ns): 44 Typical Turn-On Delay Time (ns): 8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220FP Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 16.12(Max) Package Length: 10.63(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelIRLI640GPBF
Part numberIRLI640GPBF
Items per pack25
LabelVishay
ManufacturerVishay
View on Amazon (paid link)