Vishay Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W - IRLR110PBF

TRANSISTOR MOSFETS ROHS COMPLIANT: YES

VISHAY IRLR110PBF MOSFET Transistor, N Channel, 4.3 A, 100 V, 540 mohm, 5 V, 2 V

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±10 Maximum Gate Threshold Voltage (V): 2 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 4.3 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 540@5V Typical Gate Charge @ Vgs (nC): 6.1(Max)@5V Typical Gate to Drain Charge (nC): 3.3(Max) Typical Gate to Source Charge (nC): 2(Max) Typical Reverse Recovery Charge (nC): 500 Typical Input Capacitance @ Vds (pF): 250@25V Typical Reverse Transfer Capacitance @ Vds (pF): 15@25V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 80 Maximum Power Dissipation (mW): 2500 Typical Fall Time (ns): 17 Typical Rise Time (ns): 47 Typical Turn-Off Delay Time (ns): 16 Typical Turn-On Delay Time (ns): 9.3 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Maximum Positive Gate Source Voltage (V): 10 Maximum Power Dissipation on PCB @ TC=25°C (W): 2.5 Maximum Pulsed Drain Current @ TC=25°C (A): 17 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 50 Typical Gate Plateau Voltage (V): 4.1 Typical Reverse Recovery Time (ns): 100 Maximum Diode Forward Voltage (V): 2.5 Supplier Package: DPAK Pin Count: 3 Standard Package Name: TO-252 Mounting: Surface Mount Package Height: 2.38(Max) Package Length: 6.73(Max) Package Width: 6.22(Max) PCB changed: 2 Tab: Tab Lead Shape: Gull-wing