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international-rectifier . IRLR3105TRPBF

international-rectifier . IRLR3105TRPBF

Attributes

Brand name, Manufacturer nameinternational-rectifier
Manufacturerinternational-rectifier International Rectifier
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberIRLR3105TRPBF
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWM03NE B00LWM054Q B00LWM07JE B00LWM09WO B00LWM0C4O B00M2D4T82
Brand, Label, Man, Publisher, StudioInternational Rectifier
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRLR3105TRPBF X1 MS 942-IRLR3105TRPBF X10 MS 942-IRLR3105TRPBF X100 MS 942-IRLR3105TRPBF X5 MS 942-IRLR3105TRPBF X50 MS 942-IRLR3105TRPBF X500
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 43 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V to 3 V Qg - Gate Charge: 13.3 nC Maximum Operating Temperature: + 175 C
ProductTypeNameBISS ELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (1 piece) MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (10 pieces) MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (100 pieces) MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (5 pieces) MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (50 pieces) MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark41K242311
RadwellIRLR3105TRPBF20002000
1SourceIRLR3105TRPBF11
HotendaH18090811400011 @ $0.36

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MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 43 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V to 3 V Qg - Gate Charge: 13.3 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3105TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 43 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V to 3 V Qg - Gate Charge: 13.3 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3105TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 43 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V to 3 V Qg - Gate Charge: 13.3 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3105TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 43 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V to 3 V Qg - Gate Charge: 13.3 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3105TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (500 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 43 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V to 3 V Qg - Gate Charge: 13.3 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3105TRPBF
Product groupBISS
Product typeBISS
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 43 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V to 3 V Qg - Gate Charge: 13.3 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3105TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)