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international-rectifier . IRLR3636TRPBF

international-rectifier . IRLR3636TRPBF

Attributes

Brand name, Manufacturer nameinternational-rectifier
Manufacturerinternational-rectifier International Rectifier
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberIRLR3636TRPBF
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWM2IOQ B00LWM2KJO B00LWM2MRE B00LWM2OWC B00M2D7HLI
Brand, Label, Man, Publisher, StudioInternational Rectifier
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRLR3636TRPBF X1 MS 942-IRLR3636TRPBF X10 MS 942-IRLR3636TRPBF X100 MS 942-IRLR3636TRPBF X5 MS 942-IRLR3636TRPBF X50
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 99 A Rds On - Drain-Source Resistance: 6.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.5 V Qg - Gate Charge: 33 nC Maximum Operating Temperature: + 175 C
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (1 piece) MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (10 pieces) MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (100 pieces) MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (5 pieces) MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark10R352711
1SourceIRLR3636TRPBF11
RadwellIRLR3636TRPBF20002000
Digi-Key1347075511355 @ $0.73
HotendaH180976011600011 @ $0.60
SchukatIRLR3636PBF-GURT50
Epart123IRLR3636TRPBF200040002000 @ $0.48, 10000 @ $0.48
Abacus TechnologiesIRLR3636TRPBF12334
Ewing ComponentsIRLR3636TRPBF39688

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MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 99 A Rds On - Drain-Source Resistance: 6.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.5 V Qg - Gate Charge: 33 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3636TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 99 A Rds On - Drain-Source Resistance: 6.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.5 V Qg - Gate Charge: 33 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3636TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 99 A Rds On - Drain-Source Resistance: 6.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.5 V Qg - Gate Charge: 33 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3636TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 99 A Rds On - Drain-Source Resistance: 6.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.5 V Qg - Gate Charge: 33 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3636TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 99 A Rds On - Drain-Source Resistance: 6.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.5 V Qg - Gate Charge: 33 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRLR3636TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)