International Rectifier . IRLR3717PBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 34M6477 | 1 | 1 | ||
| Freelance Electronics | IRLR3717PBF | 1 | 1 | ||
 Radwell | IRLR3717PBF | 825 | 825 | ||
| 1Source | IRLR3717PBF | 1 | 1 | ||
 swatee.com | IRLR3717PBF | 1 | 535 | 1 | 1 @ $2.98 |
| Hotenda | H1830297 | 1 | 1 |
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MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 5.7 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.55 V to 2.45 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR3717PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 5.7 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.55 V to 2.45 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR3717PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 5.7 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.55 V to 2.45 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR3717PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 5.7 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.55 V to 2.45 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR3717PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 5.7 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.55 V to 2.45 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR3717PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |