INTERNATIONAL RECTIFIER . IRLR7833TRPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| 1Source | IRLR7833TRPBF | 1 | 1 | ||
 Radwell | IRLR7833TRPBF | 1 | 1 | ||
| Digi-Key | 13521320 | 1 | 1 | ||
| Hotenda | H1813091 | 1 | 1 | 1 @ $0.63 |
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MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 140 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.4 V to 2.3 V Qg - Gate Charge: 38 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR7833TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 140 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.4 V to 2.3 V Qg - Gate Charge: 38 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR7833TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 140 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.4 V to 2.3 V Qg - Gate Charge: 38 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR7833TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 140 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.4 V to 2.3 V Qg - Gate Charge: 38 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR7833TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 140 A Rds On - Drain-Source Resistance: 4.5 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.4 V to 2.3 V Qg - Gate Charge: 38 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR7833TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |