INTERNATIONAL RECTIFIER . IRLR8729TRPBF
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Radwell | IRLR8729TRPBF | 1 | 1 | ||
| 1Source | IRLR8729TRPBF | 1 | 1 | ||
![]() swatee.com | IRLR8729TRPBF | 1 | 1088 | 1 | 1 @ $1.85 |
| Hotenda | H1816193 | 1 | 1 | 1 @ $0.26 | |
| IRLR8729PBF-GURT | 2000 | 2000 @ $0.15, 3000 @ $0.15 | |||
| IRLR8729TRPBF | 2000 | 6000 | 2000 @ $0.13, 10000 @ $0.13 | ||
| IRLR8729TRPBF | 5992 | ||||
| IRLR8729TRPBF | 14000 |
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MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 58 A Rds On - Drain-Source Resistance: 11.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 10 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR8729TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 58 A Rds On - Drain-Source Resistance: 11.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 10 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR8729TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 58 A Rds On - Drain-Source Resistance: 11.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 10 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR8729TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 58 A Rds On - Drain-Source Resistance: 11.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 10 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR8729TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC (500 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 58 A Rds On - Drain-Source Resistance: 11.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 10 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR8729TRPBF |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 58 A Rds On - Drain-Source Resistance: 11.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1.35 V to 2.35 V Qg - Gate Charge: 10 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLR8729TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
