VISHAY . IRLU014PBF

Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - IPAK (TO-251) ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±10 Maximum Gate Threshold Voltage (V): 2 Maximum Continuous Drain Current (A): 7.7 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 200@5V Typical Gate Charge @ Vgs (nC): 8.4(Max)@5V Typical Gate to Drain Charge (nC): 6(Max) Typical Gate to Source Charge (nC): 3.5(Max) Typical Reverse Recovery Charge (nC): 330 Typical Input Capacitance @ Vds (pF): 400@25V Typical Output Capacitance (pF): 170 Maximum Power Dissipation (mW): 2500 Typical Fall Time (ns): 26 Typical Rise Time (ns): 110 Typical Turn-Off Delay Time (ns): 17 Typical Turn-On Delay Time (ns): 9.3 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: IPAK Pin Count: 3 Standard Package Name: TO-251 Mounting: Through Hole Package Height: 6.22(Max) Package Length: 6.73(Max) Package Width: 2.39(Max) PCB changed: 3 Tab: Tab