Vishay N Channel Mosfet, 60V, 7.2A, D2-Pak - IRLZ14SPBF
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 19M4380 | 1000 | 1000 | 1000 @ $0.72, 2500 @ $0.66 | |
![]() Galco | IRLZ14SPBF-VISH | 1000 | 1000 | 1 @ $0.63 | |
| 1Source | IRLZ14SPBF | 1 | 1 | ||
| RS Delivers | 180-8364 | 1 | 1 | 1 @ $1.51 | |
| Digi-Key | 3305359 | 1000 | 324 | 1000 | 1 @ $1.96, 10 @ $1.75, 100 @ $1.36, 500 @ $1.13, 1000 @ $0.89 |
![]() Radwell | IRLZ14SPBF | 1000 | 1000 | 1 @ $1.02 | |
| Win Source | IRLZ14SPBF | 1 | 1248 | 1 | |
| Hotenda | H1822959 | 1 | 1095 | 1 | 1 @ $1.55, 10 @ $1.38, 25 @ $1.31, 100 @ $1.08, 250 @ $1.01, 500 @ $0.89 |
| Future Electronics | 6294581 | 1000 | 1000 | 1000 @ $1.30, 100 @ $0.85, 250 @ $0.78, 500 @ $0.73, 1250 @ $0.67 |
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MOSFET N-Chan 60V 10 Amp (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 200 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 3.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLZ14SPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 60V 10 Amp (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 200 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 3.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLZ14SPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 60V 10 Amp (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 200 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 3.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLZ14SPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 60V 10 Amp (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 200 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 3.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLZ14SPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 60V 10 Amp (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 200 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 3.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRLZ14SPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
IRLZ14SPBF, Trans MOSFET N-CH Si 60V 10A 3-Pin(2+Tab) D2PAK (100 Items)
Brand: Vishay
EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Material: Si Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±10 Maximum Gate Threshold Voltage (V): 2 Maximum Continuous Drain Current (A): 10 Maximum Drain Source Resistance (mOhm): 200@5V Typical Gate Charge @ Vgs (nC): 8.4(Max)@5V Typical Gate to Drain Charge (nC): 6(Max) Typical Gate to Source Charge (nC): 3.5(Max) Typical Reverse Recovery Charge (nC): 340 Typical Input Capacitance @ Vds (pF): 400@25V Typical Output Capacitance (pF): 170 Maximum Power Dissipation (mW): 3700 Typical Fall Time (ns): 26 Typical Rise Time (ns): 110 Typical Turn-Off Delay Time (ns): 17 Typical Turn-On Delay Time (ns): 9.3 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab

