As an Amazon Associate, we earn from qualifying purchases.

ON SEMICONDUCTOR . NDD02N60ZT4G

ON SEMICONDUCTOR . NDD02N60ZT4G

Attributes

Brand name, Manufacturer nameON SEMICONDUCTOR
ManufacturerON SEMICONDUCTOR ON Semiconductor
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberNDD02N60ZT4G
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWLF98E B00LWLFBPA B00LWLFE8Y B00LWLFH90 B00LWLFK9C B00M2CLADK
Brand, Label, Man, Publisher, StudioON Semiconductor
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 863-NDD02N60ZT4G X1 MS 863-NDD02N60ZT4G X10 MS 863-NDD02N60ZT4G X100 MS 863-NDD02N60ZT4G X5 MS 863-NDD02N60ZT4G X50 MS 863-NDD02N60ZT4G X500
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 1.4 A Rds On - Drain-Source Resistance: 4 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 10.1 nC Maximum Operating Temperature: + 125 C
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET NFET IPAK 600V 2.2A 4.8R (1 piece) MOSFET NFET IPAK 600V 2.2A 4.8R (10 pieces) MOSFET NFET IPAK 600V 2.2A 4.8R (100 pieces) MOSFET NFET IPAK 600V 2.2A 4.8R (5 pieces) MOSFET NFET IPAK 600V 2.2A 4.8R (50 pieces) MOSFET NFET IPAK 600V 2.2A 4.8R (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark71R668211
Newark74AK0060124012401000 @ $0.48, 5000 @ $0.44
jotrin.comJT25-NDD02N60ZT4G1853921
1SourceNDD02N60ZT4G11
Allied Electronics7034117311
RadwellNDD02N60ZT4G25002500
Digi-Key2409617111110 @ $0.27
RS Delivers719-277111
Digi-KeyNDD02N60ZT4GOSCT-ND11
Win SourceNDD02N60ZT4G184658184184 @ $0.27, 432 @ $0.23, 1 @ $0.18
HotendaH181773311

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET NFET IPAK 600V 2.2A 4.8R (10 pieces)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 1.4 A Rds On - Drain-Source Resistance: 4 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 10.1 nC Maximum Operating Temperature: + 125 C
CategoryIndustrial & Scientific
MPNNDD02N60ZT4G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
MOSFET NFET IPAK 600V 2.2A 4.8R (100 pieces)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 1.4 A Rds On - Drain-Source Resistance: 4 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 10.1 nC Maximum Operating Temperature: + 125 C
CategoryIndustrial & Scientific
MPNNDD02N60ZT4G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
MOSFET NFET IPAK 600V 2.2A 4.8R (5 pieces)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 1.4 A Rds On - Drain-Source Resistance: 4 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 10.1 nC Maximum Operating Temperature: + 125 C
CategoryIndustrial & Scientific
MPNNDD02N60ZT4G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
MOSFET NFET IPAK 600V 2.2A 4.8R (50 pieces)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 1.4 A Rds On - Drain-Source Resistance: 4 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 10.1 nC Maximum Operating Temperature: + 125 C
CategoryIndustrial & Scientific
MPNNDD02N60ZT4G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
MOSFET NFET IPAK 600V 2.2A 4.8R (500 pieces)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 1.4 A Rds On - Drain-Source Resistance: 4 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 10.1 nC Maximum Operating Temperature: + 125 C
CategoryIndustrial & Scientific
MPNNDD02N60ZT4G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
MOSFET NFET IPAK 600V 2.2A 4.8R (1 piece)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 1.4 A Rds On - Drain-Source Resistance: 4 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 10.1 nC Maximum Operating Temperature: + 125 C
CategoryIndustrial & Scientific
MPNNDD02N60ZT4G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)