Onsemi Mosfet,n Ch,w Diode,600V,2.6A,dpak - NDD03N60ZT4G
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 74AK0065 | 1150 | 1150 | 1000 @ $0.52, 5000 @ $0.47 | |
| JT25-NDD03N60ZT4G | 1 | 15000 | 1 | ||
| Allied Electronics | 70341177 | 1 | 1 | ||
| 1Source | NDD03N60ZT4G | 1 | 1 | ||
| Digi-Key | 2409619 | 1 | 1 | 1031 @ $0.29 | |
![]() Radwell | NDD03N60ZT4G | 1 | 8 | 1 | 1 @ $0.50 |
| 719-2796 | 1 | 1 | |||
| Win Source | NDD03N60ZT4G | 1 | 150 | 1 | |
| Hotenda | H1815917 | 1 | 1 | 1 @ $0.28 |
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MOSFET NFET DPAK 2.6A 3.6R (10 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 3.3 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 125 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NDD03N60ZT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET DPAK 2.6A 3.6R (100 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 3.3 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 125 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NDD03N60ZT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET DPAK 2.6A 3.6R (1000 pieces)
Brand: ON Semiconductor
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | NDD03N60ZT4G |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | ON Semiconductor |
MOSFET NFET DPAK 2.6A 3.6R (5 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 3.3 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 125 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NDD03N60ZT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET DPAK 2.6A 3.6R (50 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 3.3 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 125 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NDD03N60ZT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET DPAK 2.6A 3.6R (500 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 3.3 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 125 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NDD03N60ZT4G |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | ON Semiconductor |
MOSFET NFET DPAK 2.6A 3.6R (1 piece)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 3.3 Ohms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 125 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NDD03N60ZT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
