Onsemi Mosfet Transistor, P Channel, -27.5 A, -60 V, 70 Mohm, -10 V, -2.8 V Rohs Compliant: Yes - NTB25P06T4G
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 98H0945 | 800 | 800 | 1 @ $1.28, 3000 @ $1.21, 6000 @ $1.15, 12000 @ $1.03, 18000 @ $0.99, 30000 @ $0.95 | |
| Newark | 10N9566 | 1 | 1 | ||
| JT25-NTB25P06T4G | 1 | 1888 | 1 | ||
| Little Diode | NTB25P06T4G | 1 | 1 | ||
| NTB25P06T4G | 1 | 1 | |||
| TME | NTB25P06T4G | 1 | 1 | ||
| RS Online | 7800510 | 1 | 1 | ||
![]() Radwell | NTB25P06T4G | 5 | 5 | ||
| RS Delivers | 780-0510 | 1 | 1 | ||
| Allied Electronics | 70341279 | 1 | 1 | ||
| 1Source | NTB25P06T4G | 1 | 1 | ||
| Digi-Key | 921532 | 1 | 1 | 1 @ $2.47, 10 @ $2.22, 100 @ $1.79 | |
| swatee.com | NTB25P06T4G | 1 | 881 | 1 | 1 @ $2.37 |
| AmazonSC | B0731P5M95 | 1 | 1 | ||
| Future Electronics | 6218978 | 800 | 800 | 800 @ $0.81, 1600 @ $0.66, 2400 @ $0.65, 3200 @ $0.65, 4000 @ $0.65 | |
| Hotenda | H1817791 | 800 | 800 | 800 @ $0.93 |
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MOSFET -60V -27.5A Pchannel (10 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 60 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 27.5 A Rds On - Drain-Source Resistance: 65 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 120 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTB25P06T4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET -60V -27.5A Pchannel (100 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 60 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 27.5 A Rds On - Drain-Source Resistance: 65 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 120 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTB25P06T4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET -60V -27.5A Pchannel (5 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 60 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 27.5 A Rds On - Drain-Source Resistance: 65 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 120 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTB25P06T4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET -60V -27.5A Pchannel (50 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 60 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 27.5 A Rds On - Drain-Source Resistance: 65 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 120 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTB25P06T4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET -60V -27.5A Pchannel (500 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 60 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 27.5 A Rds On - Drain-Source Resistance: 65 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 120 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTB25P06T4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET -60V -27.5A Pchannel (1 piece)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 60 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 27.5 A Rds On - Drain-Source Resistance: 65 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 120 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTB25P06T4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
ON SEMICONDUCTOR NTB25P06T4G P-Channel 60 V 27.5 A 65 mOhm Surface Mount Power Mosfet - D2PAK - 800 item(s)
Brand: ON Semiconductor
P-Channel 60 V 27.5 A 65 mOhm Surface Mount Power Mosfet - D2PAK ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: P-Channel
- VoltageDraintoSource: 60 V
- Drain-sourceOnResistance-Max: 75 mΩ
- QgGateCharge: 33 nC
- RatedPowerDissipation(P): 120 W
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | NTB25P06T4G |
| Part number | NTB25P06T4G |
| Items per pack | 800 |
| Label | ON SEMICONDUCTOR |
| Manufacturer | ON SEMICONDUCTOR |
Catalog
| Feature | ChannelType: P-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTB25P06T4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON SEMICONDUCTOR |
