Onsemi Ntd4809N-35G, Single Mosfets - NTD4809N-35G
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 74AK0810 | 1690 | 1690 | 1000 @ $0.25, 2500 @ $0.20, 10000 @ $0.19 | |
| NTD4809N35G | 1 | 1 | |||
 Radwell | NTD4809N-35G | 1 | 4 | 1 | |
| 1Source | NTD4809N-35G | 1 | 1 | ||
| Digi-Key | 1792953 | 1 | 1 | 1519 @ $0.23 | |
| Digi-Key | 11555913 | 1266 | 62400 | 1266 | 1266 @ $0.20 |
| Win Source | NTD4809N-35G | 1 | 1000 | 1 | |
| Hotenda | H1842831 | 1 | 1 | ||
| Rochester Electronics | NTD4809N-35G | 62400 | 1 @ $0.27, 25 @ $0.25, 100 @ $0.24, 500 @ $0.23, 1000 @ $0.22 | ||
| Express Electronics | NTD4809N-35G | 1440 | |||
| STLAA.com | NTD4809N-35G | 1728 | |||
| Ewing Components | NTD4809N-35G | 39688 | |||
| Abacus Technologies | NTD4809N-35G | 1506 |
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MOSFET NFET 30V 58A 9MOHM (10 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 11.5 A Rds On - Drain-Source Resistance: 9 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 2 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD4809N-35G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET 30V 58A 9MOHM (100 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 11.5 A Rds On - Drain-Source Resistance: 9 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 2 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD4809N-35G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET 30V 58A 9MOHM (5 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 11.5 A Rds On - Drain-Source Resistance: 9 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 2 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD4809N-35G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET 30V 58A 9MOHM (50 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 11.5 A Rds On - Drain-Source Resistance: 9 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 2 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD4809N-35G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET 30V 58A 9MOHM (500 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 11.5 A Rds On - Drain-Source Resistance: 9 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 2 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD4809N-35G |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | ON Semiconductor |
MOSFET NFET 30V 58A 9MOHM (1 piece)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 11.5 A Rds On - Drain-Source Resistance: 9 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 2 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD4809N-35G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |