ON Semiconductor . NTD5407NT4G
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 27M2726 | 1 | 1 | ||
| Newark | 74AK0890 | 1460 | 1460 | 1000 @ $0.29, 2500 @ $0.23, 10000 @ $0.23 | |
| NTD5407NT4G | 1 | 1 | |||
| Allied Electronics | 70467515 | 50 | 50 | ||
| 1Source | NTD5407NT4G | 1 | 1 | ||
| Digi-Key | 1792994 | 1 | 1 | 1312 @ $0.26 | |
![]() Radwell | NTD5407NT4G | 1 | 1 | 1 @ $0.90 | |
| Digi-Key | 11552039 | 1093 | 61050 | 1093 | 1093 @ $0.23 |
| 802-1027 | 1 | 1 | |||
| Hotenda | H1842864 | 1 | 1 |
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MOSFET NFET 40V 38A PB (10 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 38 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 75 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD5407NT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET 40V 38A PB (100 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 38 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 75 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD5407NT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET 40V 38A PB (5 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 38 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 75 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD5407NT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET 40V 38A PB (50 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 38 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 75 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD5407NT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET 40V 38A PB (500 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 38 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 75 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD5407NT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET 40V 38A PB (1 piece)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 38 A Rds On - Drain-Source Resistance: 26 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 75 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD5407NT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
