on-semiconductor . NTD6416ANL-1G
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 52R8718 | 1 | 1 | ||
| Allied Electronics | 70341319 | 1 | 1 | ||
| 1Source | NTD6416ANL-1G | 1 | 1 | ||
| Digi-Key | 2271568 | 1 | 1 | ||
![]() Radwell | NTD6416ANL-1G | 1125 | 1125 | 1 @ $1.20 | |
| Digi-Key | 11527484 | 633 | 5175 | 633 | 633 @ $0.40 |
| 719-2923 | 1 | 1 | |||
| Hotenda | H1843495 | 1 | 1 | ||
| NTD6416ANL-1G | 1 | 3525 | 1 @ $0.90, 25 @ $0.75, 100 @ $0.45, 500 @ $0.45, 1000 @ $0.44, 2500 @ $0.43 | ||
| NTD6416ANL-1G | 28 | 3525 | 28 @ $0.75, 100 @ $0.45, 500 @ $0.45, 1000 @ $0.44, 2500 @ $0.43 | ||
| NTD6416ANL-1G | 5175 | 1 @ $0.53, 25 @ $0.49, 100 @ $0.47, 500 @ $0.45, 1000 @ $0.43 | |||
| 7192923 | 1 | ||||
| C1S541900698031 | 75 | 3525 | 75 @ $1.23, 150 @ $1.18, 225 @ $1.16, 525 @ $1.09, 1050 @ $1.07 | ||
| NTD6416ANL-1G | 25 | ||||
| NTD6416ANL-1G | 360 | ||||
| NTD6416ANL-1G | 2143 | ||||
| NTD6416ANL-1G | 126 | ||||
| NTD6416ANL-1G | 105 | 1 @ $0.85, 1000 @ $0.85 |
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MOSFET NFET DPAK 100V 15A 86MOHM (10 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 19 A Rds On - Drain-Source Resistance: 74 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 71 W Mounting Style: Through Hole Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD6416ANL-1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET DPAK 100V 15A 86MOHM (100 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 19 A Rds On - Drain-Source Resistance: 74 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 71 W Mounting Style: Through Hole Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD6416ANL-1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET DPAK 100V 15A 86MOHM (5 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 19 A Rds On - Drain-Source Resistance: 74 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 71 W Mounting Style: Through Hole Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD6416ANL-1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET NFET DPAK 100V 15A 86MOHM (50 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 19 A Rds On - Drain-Source Resistance: 74 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 71 W Mounting Style: Through Hole Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTD6416ANL-1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
