on-semiconductor . NTZD3155CT5G
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 45J2184 | 1 | 1 | ||
| NTZD3155CT5G | 1 | 1 | |||
| 1Source | NTZD3155CT5G | 1 | 1 | ||
| Digi-Key | 1484965 | 1 | 1 | ||
| Hotenda | H1802639 | 1 | 1 | ||
| NTZD3155CT5G | 5000 | 1 @ $0.11, 25 @ $0.10, 100 @ $0.10, 500 @ $0.09, 1000 @ $0.09 | |||
| NTZD3155CT5G | 7500 |
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MOSFET 20V 540mA/-430mA Complementary w/ESD (10 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N and P-Channel Vds - Drain-Source Breakdown Voltage: +/- 20 V Vgs - Gate-Source Breakdown Voltage: +/- 6 V Id - Continuous Drain Current: 540 mA Rds On - Drain-Source Resistance: 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel Configuration: Dual Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD3155CT5G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET 20V 540mA/-430mA Complementary w/ESD (100 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N and P-Channel Vds - Drain-Source Breakdown Voltage: +/- 20 V Vgs - Gate-Source Breakdown Voltage: +/- 6 V Id - Continuous Drain Current: 540 mA Rds On - Drain-Source Resistance: 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel Configuration: Dual Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD3155CT5G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET 20V 540mA/-430mA Complementary w/ESD (1000 pieces)
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | NTZD3155CT5G |
| Manufacturer | ON Semiconductor |
MOSFET 20V 540mA/-430mA Complementary w/ESD (5 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N and P-Channel Vds - Drain-Source Breakdown Voltage: +/- 20 V Vgs - Gate-Source Breakdown Voltage: +/- 6 V Id - Continuous Drain Current: 540 mA Rds On - Drain-Source Resistance: 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel Configuration: Dual Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD3155CT5G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET 20V 540mA/-430mA Complementary w/ESD (50 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N and P-Channel Vds - Drain-Source Breakdown Voltage: +/- 20 V Vgs - Gate-Source Breakdown Voltage: +/- 6 V Id - Continuous Drain Current: 540 mA Rds On - Drain-Source Resistance: 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel Configuration: Dual Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD3155CT5G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET 20V 540mA/-430mA Complementary w/ESD (500 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N and P-Channel Vds - Drain-Source Breakdown Voltage: +/- 20 V Vgs - Gate-Source Breakdown Voltage: +/- 6 V Id - Continuous Drain Current: 540 mA Rds On - Drain-Source Resistance: 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel Configuration: Dual Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD3155CT5G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
NTZD3155CT5G
Brand: ON Semiconductor
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | NTZD3155CT5G |
| Label | ON Semiconductor |
| Manufacturer | ON Semiconductor |
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N and P-Channel Vds - Drain-Source Breakdown Voltage: +/- 20 V Vgs - Gate-Source Breakdown Voltage: +/- 6 V Id - Continuous Drain Current: 540 mA Rds On - Drain-Source Resistance: 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel Configuration: Dual Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD3155CT5G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |