NEXPERIA . PHD3055E,118
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 70R7420 | 1 | 1 | ||
| 1Source | PHD3055E,118 | 1 | 1 | ||
| Digi-Key | 11517468 | 1 | 1 | ||
 swatee.com | PHD3055E,118 | 1 | 23 | 1 | 1 @ $2.26 |
| Hotenda | H1833224 | 1 | 1 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
MOSFET N-CH TRNCH 60V 10.3A
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | PHD3055E,118 |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH TRNCH 60V 10.3A (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Single RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 44 A Rds On - Drain-Source Resistance: 120 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 33 W Mounting Style: SMD/SMT Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PHD3055E,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH TRNCH 60V 10.3A (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Single RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 44 A Rds On - Drain-Source Resistance: 120 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 33 W Mounting Style: SMD/SMT Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PHD3055E,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH TRNCH 60V 10.3A (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Single RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 44 A Rds On - Drain-Source Resistance: 120 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 33 W Mounting Style: SMD/SMT Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PHD3055E,118 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |