ONSEMI . 2N6517CTA
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| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 83C3459 | 1 | 1 | ||
| TME | 2N6517CTA | 1 | 1 | ||
| Digi-Key | 975307 | 1 | 1 | ||
| Digi-Key | 13452248 | 1 | 1 | 2000 @ $0.04 | |
![]() swatee.com | 2N6517CTA | 1 | 5693 | 1 | 1 @ $0.50 |
| 805-1110 | 1 | 1 | |||
| 1Source | 2N6517CTA | 1 | 1 |
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Transistors Bipolar - BJT NPN Si Transistor Epitaxial (10 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 350 V Collector- Emitter Voltage VCEO Max: 350 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 30 |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N6517CTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (100 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 350 V Collector- Emitter Voltage VCEO Max: 350 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 30 |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N6517CTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (1000 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 350 V Collector- Emitter Voltage VCEO Max: 350 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 30 |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N6517CTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (5 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 350 V Collector- Emitter Voltage VCEO Max: 350 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 30 |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N6517CTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (50 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 350 V Collector- Emitter Voltage VCEO Max: 350 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 30 |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N6517CTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (500 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 350 V Collector- Emitter Voltage VCEO Max: 350 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 30 |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N6517CTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (1 piece)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 350 V Collector- Emitter Voltage VCEO Max: 350 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 30 |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N6517CTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
TRANS NPN 350V 0.5A TO-92 (100 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | <b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>Transistor Type:</b> NPN <b>Current - Collector (Ic) (Max):</b> 500mA <b>Voltage - Collector Emitter Breakdown (Max):</b> 350V <b>Vce Saturation (Max) @ Ib, Ic:</b> 1V @ 5mA, 50mA <b>DC Current Gain (hFE) (Min) @ Ic, Vce:</b> 20 @ 50mA, 10V <b>Power - Max:</b> 625mW <b>Frequency - Transition:</b> 200MHz <b>Mounting Type:</b> Through Hole <b>Package / Case:</b> TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N6517CTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Fairchild Semiconductor |
TRANS NPN 350V 0.5A TO-92 (1000 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | <b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>Transistor Type:</b> NPN <b>Current - Collector (Ic) (Max):</b> 500mA <b>Voltage - Collector Emitter Breakdown (Max):</b> 350V <b>Vce Saturation (Max) @ Ib, Ic:</b> 1V @ 5mA, 50mA <b>DC Current Gain (hFE) (Min) @ Ic, Vce:</b> 20 @ 50mA, 10V <b>Power - Max:</b> 625mW <b>Frequency - Transition:</b> 200MHz <b>Mounting Type:</b> Through Hole <b>Package / Case:</b> TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N6517CTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Fairchild Semiconductor |
2N6517CTA, Trans GP BJT NPN 400V 0.5A 625mW 3-Pin TO-92 Fan-Fold (100 Items)
Brand: ON Semiconductor
2N6517CTA, Trans GP BJT NPN 400V 0.5A 625mW 3-Pin TO-92 Fan-Fold (100 items)
