Nexperia Mosfet,nn Channel,60V,0.34A,sot666 - 2N7002BKV,115
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Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 28T0306 | 5 | 19830 | 5 | 1 @ $0.45, 10 @ $0.33, 25 @ $0.27, 50 @ $0.22, 100 @ $0.17, 250 @ $0.16, 500 @ $0.15, 1000 @ $0.12 |
| 2N7002BKV.115 | 5 | 3720 | 5 | 5 @ $0.24, 25 @ $0.16, 100 @ $0.14, 500 @ $0.12, 4000 @ $0.12 | |
| 1Source | 2N7002BKV,115 | 1 | 1 | ||
| Digi-Key | 2532379 | 1 | 1 | 1 @ $0.43, 10 @ $0.33, 100 @ $0.20, 500 @ $0.14, 1000 @ $0.11, 2000 @ $0.10, 4000 @ $0.10, 8000 @ $0.09 | |
| Digi-Key | 10474100 | 3921 | 3921 | 3921 @ $0.05 | |
| AmazonSC | B076FDFQJC | 1 | -2 | 1 | 1 @ $618.26 |
| 165-9784 | 4000 | 16000 | 4000 | 4000 @ $0.02 | |
![]() iodParts | 2N7002BKV,115 | 4000 | 12000 | 4000 | 4000 @ $0.07, 8000 @ $0.06 |
![]() AmazonTP | B076FDFQJC | 1 | 1 | 1 @ $618.26 | |
| Win Source | 2N7002BKV,115 | 1 | 12311 | 1 |
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MOSFET Dual N-Channel 60V 340mA (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 340 mA Rds On - Drain-Source Resistance: 1.6 Ohms Configuration: Dual Qg - Gate Charge: 0.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 525 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N7002BKV,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET Dual N-Channel 60V 340mA (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 340 mA Rds On - Drain-Source Resistance: 1.6 Ohms Configuration: Dual Qg - Gate Charge: 0.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 525 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N7002BKV,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET Dual N-Channel 60V 340mA (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 340 mA Rds On - Drain-Source Resistance: 1.6 Ohms Configuration: Dual Qg - Gate Charge: 0.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 525 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N7002BKV,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET Dual N-Channel 60V 340mA (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 340 mA Rds On - Drain-Source Resistance: 1.6 Ohms Configuration: Dual Qg - Gate Charge: 0.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 525 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N7002BKV,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET Dual N-Channel 60V 340mA (500 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 340 mA Rds On - Drain-Source Resistance: 1.6 Ohms Configuration: Dual Qg - Gate Charge: 0.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 525 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N7002BKV,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET Dual N-Channel 60V 340mA
Brand: NXP Semiconductors
Listing
| Binding | Electronics |
|---|---|
| Product group | CE |
| Product type | CONSUMER_ELECTRONICS |
| Part number | 2N7002BKV,115 |
| Label | NXP Semiconductors |
| Manufacturer | NXP Semiconductors |
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 340 mA Rds On - Drain-Source Resistance: 1.6 Ohms Configuration: Dual Qg - Gate Charge: 0.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 525 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N7002BKV,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
NEXPERIA 2N7002BKV,115 2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET - SOT666 - 4000 item(s)
Brand: NEXPERIA
2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET - SOT666 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: Dual N-Channel
- VoltageDraintoSource: 60 V
- Drain-sourceOnResistance-Max: 1.6 ?
- QgGateCharge: 0.6 nC
- RatedPowerDissipation(P): 350 mW
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | 2N7002BKV,115 |
| Part number | 2N7002BKV,115 |
| Items per pack | 4000 |
| Label | NEXPERIA |
| Manufacturer | NEXPERIA |
Catalog
| Feature | ChannelType: Dual N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | 2N7002BKV,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NEXPERIA |
