Vishay Mosfet, P Channel, -80V, -28A, Powerpak So-8, Full Reel - SI7469DP-T1-E3

P CHANNEL MOSFET, -80V, 28A, PowerPAK SO; Transistor Polarity:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:28A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

VISHAY SILICONIX SI7469DP-T1-E3 P CHANNEL MOSFET, -80V, 28A, PowerPAK SO

Single P-Channel 80 V 25 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

Single P-Channel 80 V 25 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 80 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 3 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 28 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 25@10V Typical Gate Charge @ Vgs (nC): 105@10V|55@4.5V Typical Gate Charge @ 10V (nC): 105 Typical Gate to Drain Charge (nC): 26 Typical Gate to Source Charge (nC): 16 Typical Reverse Recovery Charge (nC): 110 Typical Input Capacitance @ Vds (pF): 4700@40V Typical Reverse Transfer Capacitance @ Vds (pF): 235@40V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 320 Maximum Power Dissipation (mW): 5200 Typical Fall Time (ns): 100|110 Typical Rise Time (ns): 220|25 Typical Turn-Off Delay Time (ns): 95|105 Typical Turn-On Delay Time (ns): 45|15 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 5.2 Maximum Pulsed Drain Current @ TC=25°C (A): 40 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 65 Typical Diode Forward Voltage (V): 0.8 Typical Gate Plateau Voltage (V): 3.2 Typical Reverse Recovery Time (ns): 55 Maximum Diode Forward Voltage (V): 1.2 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 10.2 Pin Count: 8 Standard Package Name: SO Supplier Package: PowerPAK SO EP Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead