Product_description: ['EU RoHS: Compliant ECCN (US): EAR99 Product Category: Power MOSFET Configuration: Single Quad Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 9 Maximum Drain Source Resistance (mOhm): 79@10V Typical Gate Charge @ Vgs (nC): 6.2@10V Typical Gate Charge @ 10V (nC): 6.2 Typical Input Capacitance @ Vds (pF): 271@25V Maximum Power Dissipation (mW): 13600 Typical Fall Time (ns): 5 Typical Rise Time (ns): 4 Typical Turn-Off Delay Time (ns): 14 Typical Turn-On Delay Time (ns): 6 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Supplier Temperature Grade: Automotive Packaging: Tape and Reel']

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