Product_description: ['EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.21.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: HEXFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 400 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 2 Maximum Drain Source Resistance (mOhm): 3600@10V Typical Gate Charge @ Vgs (nC): 17(Max)@10V Typical Gate Charge @ 10V (nC): 17(Max) Typical Input Capacitance @ Vds (pF): 170@25V Maximum Power Dissipation (mW): 36000 Typical Fall Time (ns): 11 Typical Rise Time (ns): 9.9 Typical Turn-Off Delay Time (ns): 21 Typical Turn-On Delay Time (ns): 8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220AB Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 9.01(Max) Package Length: 10.41(Max) Package Width: 4.7(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole', "Single N-Channel 400 V 3.6 Ohms Flange Mount Power Mosfet - TO-220AB ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****", 'VISHAY IRF710PBF MOSFET Transistor, N Channel, 1.5 A, 400 V, 3.6 ohm, 10 V, 4 V'] (Page 1)