Product_description: ['EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Obsolete HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Material: Si Configuration: Single Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 175 Maximum Continuous Drain Current (A): 11 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 100 Maximum Drain Source Resistance (mOhm): 280@10V Typical Gate Charge @ Vgs (nC): 19(Max)@10V Typical Gate Charge @ 10V (nC): 19(Max) Typical Gate to Drain Charge (nC): 11(Max) Typical Gate to Source Charge (nC): 5.4(Max) Typical Reverse Recovery Charge (nC): 320 Typical Input Capacitance @ Vds (pF): 570@25V Typical Reverse Transfer Capacitance @ Vds (pF): 65@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 360 Maximum Power Dissipation (mW): 3700 Typical Fall Time (ns): 29 Typical Rise Time (ns): 68 Typical Turn-Off Delay Time (ns): 15 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Packaging: Tape and Reel Maximum Positive Gate Source Voltage (V): 20 Maximum Pulsed Drain Current @ TC=25°C (A): 44 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 40 Typical Gate Plateau Voltage (V): 7 Typical Reverse Recovery Time (ns): 100 Maximum Diode Forward Voltage (V): 6.3 Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab'] (Page 1)