Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)7.0
C(ob) (F)1.1p
CaseTO98
Collector Capacitance (.1.3 pF
Derate (Amb) (W/?C)2.7m
Forward Current Transfe.50
hfe100
Ic Max. (A)20m
Icbo Max. @Vcb Max. (A)500n
ManufacturerAEI Semiconductors
Max. Operating Junction.125 ?C
Max. PD (W)200m
Maximum Collector Curre.0.02 A
Maximum Collector Power.0.12 W
Maximum Collector-Base .35 V
Maximum Collector-Emitt.35 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.100
Pinout Equivalence Numb.3-10
PolarityNPN
SKU533518
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.200m
Transition Frequency (f.100 MHz
TypeTransistor Silicon NPN
Vbr CBO40
Vbr CEO35
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