Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET FeatureSchottky Diode (Body)
FET TypeP-Channel
Gate Charge (Qg) (Max) .6.5 nC @ 4.5 V
Input Capacitance (Ciss.700 pF @ 10 V
MfrAlpha & Omega Semicondu.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Part StatusObsolete
Power Dissipation (Max)1.5W (Ta)
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 4.5V
Series-
Supplier Device Package6-DFN (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A
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