Attributes

Key Value
@Ic (test) (A)30m
@VCE (V)10
CaseTO39
Collector Capacitance (.7 pF
Derate Above 25?C28m
Forward Current Transfe.25
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)50n
ManufacturerST Microelectronics - S.
Max. Operating Junction.125 ?C
Max. PD (W)5.0
Maximum Collector Curre.0.1 A
Maximum Collector Power.0.8 W
Maximum Collector-Base .250 V
Maximum Collector-Emitt.250 V
Maximum Emitter-Base Vo.5 V
Min hFE25
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
R(sat) (?)33m
SKU20267
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.90M
Transition Frequency (f.55 MHz
TypeTransistor Silicon NPN
Vbr CBO250
Vbr CEO250
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