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Diodes Incorporated DDTB114GC-7-F
manufacturer:
Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SOT-23-3

Attributes

Key ^Value
Base Product NumberDDTB114
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA, 5V
Frequency - Transition200 MHz
MfrDiodes Incorporated
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Power - Max200 mW
Product StatusObsolete
Resistor - Emitter Base (R2)10 kOhms
Series-
Supplier Device PackageSOT-23-3
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)50 V