Alternate Part No. | 522-DMC2020USD-13 |
Base Product Number, Series | DMC2020 |
Brand, Manufacturer, Mfr | Diodes Incorporated |
Case | SO8 |
Category | Discrete Semiconductor Products |
Channel Mode | Enhancement |
Ciss - Input Capacitance | 1149 pF, 1610 pF |
Configuration | Complementary |
Current - Continuous Drain (Id) @ 25?C | 7.8A, 6.3A |
Drain current | 6.3/-7.8A |
Drain to Source Voltage (Vdss) | 20V |
Drain-source voltage | 20/-20V |
Features of semiconductor devices | ESD protected gate |
FET Feature | Logic Level Gate |
FET Type, Transistor Polarity | N and P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 11.6nC @ 4.5V |
Gate-source voltage | ?10V |
Id - Continuous Drain Current | 8.5 A, - 6.8 A |
Input Capacitance (Ciss) (Max) @ Vds | 1149pF @ 10V |
Kind of channel | enhanced |
Kind of package | reel, |
Kind of transistor | complementary pair |
Manufacturer Part No. | DMC2020USD-13 |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting | SMD |
Mounting Style | SMD/SMT |
Mounting Type | Surface Mount |
On-state resistance | 0.02/0.033? |
Operating Temperature | -55?C ~ 150?C (TJ) |
Package | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Package/Case | SO-8 |
Packaging | Reel |
Pd - Power Dissipation | 1.25 W |
Polarisation | unipolar |
Power - Max, Power dissipation | 1.8W |
Product Category | MOSFET |
Product Status | Active |
Qg - Gate Charge | 11.6 nC |
Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V |
Rds On - Drain-Source Resistance | 28 mOhms, 45 mOhms |
Series | - |
Supplier Device Package | 8-SO |
Type of transistor | N/P-MOSFET |
Vds - Drain-Source Breakdown Voltage | 20 V, 20 V |
Vgs - Gate-Source Breakdown Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Vgs(th) (Max) @ Id | 1.5V @ 250?A |